Effect of Substrate Misorientation Angle on Self-Assembling Structures
£5.00
S. Paul (1999), JBIS, 52, 181-184
Refcode: 1999.52.181
Abstract:
The substrate misorientation effect on epitaxial semiconductor layers grown by organometallic vapour phase epitaxy is investigated theoretically. In-situ self-organising type of fabrication method for semiconductor devices for nanotechnology is considered. The idea of self-assembling structures to fabricate variable sized devices on the nanometre scale is proposed. Self-assembling structures for nanodevice fabrication will have a great influence on the future of space technology.
